18–26 Sept 2025
Ito International Research Center
Asia/Tokyo timezone

Optimization of deposition parameters for synthesising Nb3Sn film on copper cavity with and without buffer layer

TUP28
23 Sept 2025, 14:30
3h
Ito International Research Center

Ito International Research Center

Tokyo
Board: TUP28
Poster Presentation MC3: Cavities Tuesday Poster Session

Speaker

Christopher Benjamin (Science and Technology Facilities Council)

Description

In this study, superconducting Nb3Sn films were synthesised on different substrate such as sapphire, diamond turned copper and polished Nb, by DC magnetron sputtering from a single stoichiometric alloy Nb3Sn target. The structural, morphological and superconducting properties of the films were investigated. The effect of different deposition and substrate was examined. The film properties are characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, and secondary ion mass spectroscopy, X-ray photon spectroscopy. The DC superconducting properties of the films deposited on sapphire are characterized by a four-point probe measurement and squid magnetometer down to cryogenic temperatures. The RF surface resistance and critical temperature of films deposited on copper was measured over a temperature range of 4–23 K using 8.7 GHz choke Nb cavity. As-deposited Nb3Sn films on sapphire had a superconducting critical temperature of 18.26 K for optimum deposition condition. For the films deposited on copper and niobium has Tc of 16.5 K to 19 K , the surface resistance for direct 2.5 µm thick Nb3Sn, on copper was 25μΩ, which increased by two orders of magnitude when deposited on buffer layer of 4 µm thick Nb. Nb3Sn deposited on Nb QPR resulted to surface resistance of 25 nΩ at 1.3 GHz and 4.2 K.

Funding Agency

STFC

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Author

Christopher Benjamin (Science and Technology Facilities Council)

Co-authors

Dr Daniel Seal (Science and Technology Facilities Council) Reza Valizadeh (Science and Technology Facilities Council) Stephane Simon (University of Liverpool) Dr oleg Malyshev (Science and Technology Facilities Council)

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