Speaker
Description
RadiaBeam has recently built and commissioned a novel C-band photo injector for high brightness Inverse Compton Source. This photoinjector is capable of producing ultra-short femtoseconds electron 250 pC bunches producing up to 300 A of beam current while maintaining the transverse emittance at a submicron level. In this paper, we describe the beam characterization of this photoinjector using novel field effect transistors (FET) sub-THz detectors. FET detectors based on nanoscale semiconductor wires are passive devices and capable of detecting a very short and weak signal in THz and sub-THz reneges and suit well for beam characterization. By detecting the signal from the coherent transition radiation produced by the electron bunch passing through a thin aluminum foil we were able to characterize the longitudinal beam parameters. This work describes the system layout, experiment procedure, and test results of bunch length measurements.
Funding Agency
DOE project number DE-SC0022791; DOD project number HR001120C0072
| Region represented | North America |
|---|---|
| Paper preparation format | Word |
