19–24 May 2024
Music City Center
US/Central timezone

Monte-Carlo photoemission model for thin film semiconductors under high fields

WEPC58
22 May 2024, 16:00
2h
Country (MCC Exhibit Hall A)

Country

MCC Exhibit Hall A

Poster Presentation MC2.T02 Electron Sources Wednesday Poster Session

Speaker

Chengkun Huang (Los Alamos National Laboratory)

Description

Monte-Carlo models have been successfully used to model bulk semiconductor photocathodes, such as GaAs and others. Here we present a Monte-Carlo model under development for the photoemission from semiconductor thin films, such as Cs2Te, under high acceleration field gradient. Thin films and heterostructures, as well as high photocathode gun operating gradient and cyro-cooling, are both beneficial to high brightness electron sources. Our model employs electronic, phonon, dielectric and optical properties directly from Density Functional Theory (DFT) calculation. Furthermore, a photo excitation model based on the light interference effect in thin films is also being implemented, where our previous work indicates that such effect plays an important role in the photoemission from semiconductor thin films. Effects of the high field gradient on the semiconductor photocathode on the quality of the emitted electron beams will be discussed and used to inform a theoretical transport model based on the moment method and the cathode development for the CARIE project at LANL.

Funding Agency

Work supported by the LDRD program at LANL.

Region represented North America
Paper preparation format LaTeX

Primary author

Chengkun Huang (Los Alamos National Laboratory)

Co-authors

Dimitre Dimitrov (Los Alamos National Laboratory) Anna Alexander (Los Alamos National Laboratory) Gaoxue Wang (Los Alamos National Laboratory) Danny Perez (Los Alamos National Laboratory) Soumendu Bagchi (Los Alamos National Laboratory) Ryo Shinohara (Los Alamos National Laboratory) Evgenya Simakov (Los Alamos National Laboratory)

Presentation materials

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