16–21 Aug 2026
Daejeon Convention Center
Asia/Seoul timezone

Development of a Prototype RF Absorbing Load for High‑Power Accelerator Applications

Not scheduled
2h
Daejeon Convention Center

Daejeon Convention Center

107 Expo-ro, Yuseong-gu, Daejeon (34125) South Korea
Poster Presentation MC4.A07: Room temperature RF Poster Session

Speaker

Kwanghoon Kim (Pohang Accelerator Laboratory)

Description

A prototype RF absorbing load has been designed at the Pohang Accelerator Laboratory to stably absorb multi‑megawatt peak power and several kilowatts of average power. Conventionally, silicon carbide (SiC) loads have been widely employed for residual RF power absorption. In this study, however, a different approach was adopted by coating an absorbing material onto an aluminum structure, thereby enabling effective RF absorption along with enhanced thermal conduction. The proposed dry load was designed with target specifications of 2.856 GHz operating frequency, 1 μs pulse width, 30 MW peak power, input VSWR of less than 1.1, and a repetition rate of 120 Hz. The total length of the load is 1.1 m, and the structure consists of six wedge sections and two taper sections to ensure efficient impedance matching and power attenuation. Following fabrication, cold tests were conducted, confirming that the measured RF characteristics satisfy the design requirements. Subsequently, high‑power tests were performed at a repetition rate of 60 Hz with a peak power of 32 MW. In the following sections, the experimental results obtained to date are presented and discussed in detail.

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Author

Kwanghoon Kim (Pohang Accelerator Laboratory)

Co-author

Chang-Ki Min (Pohang Accelerator Laboratory)

Presentation materials

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