Speaker
Description
RFHIC presents measured performance from its 150 kW, 500 MHz GaN-on-SiC Solid-State Amplifier system, for the 4th Generation Synchrotron Radiation (4GSR) project at Pohang Accelerator Laboratory. Results demonstrate 62% system efficiency, sub-0.25 dB gain flatness, sub-1° phase variation over 48 hours, MTTF exceeding one million hours, and validated graceful degradation under multi-module failure. The presentation compares GaN, LDMOS, and tube-based architectures across CW and pulsed regimes, quantifies facility-scale energy savings, and outlines RFHIC's GaN amplifier roadmap for next-generation light sources and pulsed linac applications.
This work was conducted under the 4GSR project, with PAL as a joint R&D partner and KBSI serving as the lead project administrator.
| Paper status | No proceeding file submitted. |
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