17–22 May 2026
C.I.D
Europe/Zurich timezone

Enhanced superconducting properties of Nb films via a high-power impulse magnetron re-sputtering/sputtering approach for Nb–Cu 1.3 GHz RF cavities

TUP7731
19 May 2026, 16:00
2h
C.I.D

C.I.D

Deauville, France
Poster Presentation MC7.T07: Superconducting RF Poster session

Speaker

JianJun XIAO (ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, ShanghaiTech University, State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology, ShanghaiTech University)

Description

Conformal deposition of high-performance superconducting films on complex cavity geometries, particularly ensuring robust film-substrate adhesion, remains a fundamental challenge. We address this by introducing a novel high-power impulse magnetron re-sputtering and sputtering (HiPIMRS) system designed for uniform niobium (Nb) film deposition on the interior surfaces of 1.3 GHz copper cavities. A key innovation is an in-situ copper substrate re-sputtering step prior to Nb deposition, which eliminates interfacial oxides and degradation, ensuring atomic-scale interfacial integrity. Through in-situ re-sputtering prior to deposition, we achieve oxide-free Nb/Cu interfaces with atomic-scale integrity. Crucially, electrical transport measurements demonstrate a significant enhancement in the superconducting transition temperature from 8.5 K to 9.3 K for HiPIMRS films, along with smooth surfaces (Rₐ < 20 nm) and a preferred (110) orientation. This work establishes HiPIMRS as a viable pathway for next-generation superconducting radiofrequency (SRF) cavity production, with its interfacial engineering protocols offering significant advancements in film conformity and superconducting properties.

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Author

JianJun XIAO (ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, ShanghaiTech University, State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology, ShanghaiTech University)

Co-authors

Mr Jun LI (ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, ShanghaiTech University, State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology, ShanghaiTech University) Mr Peng DONG (ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, ShanghaiTech University, State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology, ShanghaiTech University) Mr Yanjiang WANG (ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, ShanghaiTech University, State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology, ShanghaiTech University)

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