17–22 May 2026
C.I.D
Europe/Zurich timezone

Preparation and Research of CsBr-Coated Cs3Sb Photocathodes

TUP2668
19 May 2026, 16:00
2h
C.I.D

C.I.D

Deauville, France
Poster Presentation MC2.T02: Photon sources: Electron Sources Poster session

Speaker

YUXIN CHENG (Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai Institute of Applied Physics, Chinese Academy of Sciences)

Description

Abstract
Cs3b photocathodes are promising electron sources for accelerators because of their high quantum efficiency (QE) under visible light, but their poor vacuum tolerance limits practical operation. In this work, Cs3Sb photocathodes coated with CsBr were prepared and characterized. The experimental results indicate that the coating reduced the initial QE, but improved the vacuum tolerance of the photocathodes by approximately two orders of magnitude. In addition, the coated photocathodes could be reactivated by annealing after atmospheric exposure, and the recovered QE could exceed the value measured before exposure to the atmosphere.

Funding Agency

Supported by National Natural Science Foundation of China (No.12275339), Science and Technology Innovation Plan of Shanghai (No.22ZR1470300), Youth Innovation Promotion Association of Chinese Academy

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Author

Mr tao hou (Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai Advanced Research Institute, Chinese Academy of Sciences)

Co-authors

Prof. zenggong jiang (Shanghai Advanced Research Institute) Prof. qiang gu (Shanghai Institute of Applied Physics, Shanghai Advanced Research Institute) Mr Xudong Li (Shanghai Advanced Research Institute) Mr hao meng (Shanghai Advanced Research Institute) Dr qin zhou (Zhangjiang Laboratory) Chen Wang (Zhangjiang Laboratory) Dr zehao tong (Shanghai Advanced Research Institute, Chinese Academy of Sciences, Zhangjiang Laboratory) YUXIN CHENG (Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai Institute of Applied Physics, Chinese Academy of Sciences)

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