Speaker
Description
Extreme Ultraviolet (EUV) lithography has established itself as a key technology in the semiconductor chip manufacturing that supports many aspects of life in modern society. Almost all current EUV lithography tools use plasma-based light sources that deliver broad-band EUV emission from laser-irradiated molten tin droplets [1]. These standalone plasma-based EUV light sources are inefficient and not conducive to future migration to shorter wavelengths for the continuation of Moore’s law. In this paper we present an efficient and wavelength agile light source based on an energy recovery linac (ERL) driven free-electron laser (FEL). The FEL-based EUV source provides adjustable emission spectra that are much narrower than those of the plasma light sources and fit well within the narrow reflectivity curve of molybdenum-silicon multilayer mirrors. The FEL output can be adjusted to a shorter wavelength such as 6.x and 4.5 nm for future advanced lithography [2]. At these short wavelengths, photon shot noise becomes important and the FEL high photon flux capability constitutes a strong advantage over the plasma light source. More importantly, the use of superconducting RF linac in an ERL significantly increases the system wall-plug efficiency and enables multi-scanner EUV lithography. We present FEL simulations and conceptual analyses of a high-power ERL FEL that can provide multiple EUV beams simultaneously to multiple lithographic scanners in a large-scale semiconductor fab facility.
Footnotes
- “Extreme Ultraviolet Lithography,” Dimitrios Kazazis, Jara Garcia Santaclara, Jan van Schoot, Iacopo Mochi & Yasin Ekinci, Nature Reviews Methods Primers, volume 4, Article number: 84 (2024).
** “Beyond EUV lithography: a comparative study of efficient photoresists’ performance,” Nassir Mojarad, Gens Gobrecht and Yasin Ekinci, Scientific Reports, volume 5, Article number: 9235 (2015).
| Paper status | No proceeding expected for this contribution. |
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