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Accelerator-enabled ion irradiation is a versatile technique for tailoring the structural and electrical properties of materials. By enabling precise defect creation over targeted regions, ion beams provide an effective way for advancing oxide-based electronic devices. This capability is crucial for emerging memory technologies like Resistive Random Access Memory (RRAM), where defect configuration critically governs resistive switching behavior in metal/insulator/metal structures.
In this work, we investigate the impact of low-energy Ag and Kr ion irradiation on titanium oxide (TiOx) and tantalum oxide (TaOx) thin films used in RRAM devices. The oxide films are fabricated at room temperature employing RF magneton sputtering technique. The 50 keV Ag ion irradiation (fluences: 1×10¹⁵, 3×10¹⁵, 1×10¹⁶ ions/cm²) was performed at HZDR, Dresden, Germany, while the 100 keV Kr ion irradiation (fluences: 3×10¹⁵, 1×10¹⁶, 3×10¹⁶ ions/cm²) was carried out using an ECR-based low-energy particle accelerator at IUAC, New Delhi. The result shows that pristine TiOx devices, which initially exhibited no switching, demonstrated an enhancement in resistance ratio >100 after irradiation with both Ag and Kr ions. In contrast, the TaOx-based devices undergo excessive defect accumulation. Additionally, accelerator-driven techniques, RBS and resonant RBS, together with synchrotron-based XPS, were utilized to enable comprehensive elemental and chemical analysis.
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