Speaker
Description
The progressive obsolescence and the discontinuation of vacuum tube production are driving the transition towards solid-state alternatives in RF acceleration systems. In the 10 MHz RF system of the Proton Synchrotron (PS) at CERN, the discontinuation of a specific tetrode model used in the amplifier chain has motivated the evaluation of solid-state technology as a potential replacement. In particular, amplifiers based on Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) are being considered due to their inherent radiation tolerance. For this purpose, a prototype driver amplifier based on the GaN technology has been built. This contribution presents the different development steps of this prototype, as well as its integration into the 10 MHz RF system. This includes a system-level description of the RF system and of the constraints associated to the integration of such a prototype, followed by its hardware description and qualification process. This qualification was carried out in two steps: firstly through RF measurements without beam, and secondly with a characterization of the system with high-intensity proton beams, under normal operating conditions.
| In which format do you inted to submit your paper? | LaTeX |
|---|---|
| Preprint marking on your proceeding paper | I do not wish my paper to be marked as preprint. |