17–22 May 2026
C.I.D
Europe/Zurich timezone

Growth and Evaluation of High QE Semiconductor Photocathodes for High-Brightness Electron Sources

THP3326
21 May 2026, 16:00
2h
C.I.D

C.I.D

Deauville, France
Poster Presentation MC3.T02: Advanced techniques/Novel sources: Electron Sources Poster session

Speaker

Peter Owusu (Arizona State University)

Description

Alkali–antimonide photocathodes are promising candidates for high-brightness electron sources due to their combination of high quantum efficiency (QE) in the visible range and intrinsically low mean transverse energy (MTE). In this work, we present ongoing R&D aimed at understanding and optimizing their growth and performance. Using an ultra-high-vacuum (UHV) preparation and transfer system, we grow and characterize a range of alkali metal-based high QE compounds. The photocathodes are tested in situ in a high-gradient DC electron gun immediately after growth, allowing direct correlation between growth parameters, surface properties, and field emission performance. The results provide comparative insights into alkali–antimonide and telluride photocathodes, highlighting the trade-offs between QE, robustness, and brightness, and guiding further optimization of high-brightness electron sources for accelerator applications.

Funding Agency

Defense Advanced Research Projects Agency (DARPA)
Taiwan Semiconductor Manufacturing Company (TSMC)
National Science Foundation (NSF)
U.S. Department of Energy (DOE)

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Author

Peter Owusu (Arizona State University)

Co-authors

Mr Jak Knefel (Arizona State University) Mr Jo Mama (Arizona State University) Siddharth Karkare (Arizona State University)

Presentation materials

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