17–22 May 2026
C.I.D
Europe/Zurich timezone

Benchmarking Impedance Calculations for Two Types of Transition Structures in HALF: CST vs. ECHO3D

THP5636
21 May 2026, 16:00
2h
C.I.D

C.I.D

Deauville, France
Poster Presentation MC5.D03: Calculations of EM fields Theory and Code Developments Poster session

Speaker

Jincheng Xiao (University of Science and Technology of China)

Description

Photon masks and tapered transitions in the Hefei Advanced Light Facility (HALF) storage ring are typical transition structures that can make non-negligible contributions to the geometric impedance. In this work, ECHO3D is used to benchmark the CST calculations for these two types of structures. The longitudinal and transverse wake potentials, the corresponding impedance spectra, and the resulting loss factor, kick factor, and effective impedance are analyzed and compared. This study provides a reference for impedance evaluation of these transition structures in HALF.

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Author

Xin Huang (University of Science and Technology of China)

Co-authors

Tianlong He (University of Science and Technology of China) Haiyan Yao (University of Science and Technology of China) Jincheng Xiao (University of Science and Technology of China)

Presentation materials

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