Speaker
Description
We present a systematic study of GaAs-based superlattice photocathodes designed to enhance heavy-hole–light-hole (HH–LH) band splitting and optimize conduction band alignment for improved electron transport. Using a kilo-electron-volt (keV) MicroMott polarimeter, we evaluate the spin polarization performance of various superlattice architectures, including compressively strained GaAs wells on GaInP barriers, lattice-matched GaAs/GaInP structures, and tensile-strained GaAs wells on GaInP barriers. Our results look at how careful engineering of strain and quantum confinement could enable tunable HH–LH splitting while simultaneously reducing the conduction band barrier height. These combined effects are critical for achieving high electron spin polarization and quantum efficiency, key metrics for next-generation spin-polarized electron sources. This work establishes a design framework for high-performance photocathodes based on the synergistic use of strain engineering, heterostructure optimization, and quantum well design.
Funding Agency
This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Nuclear Physics under contract DE-AC05-06OR23177 and award DESC0025519.
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