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Description
Because of the aging, and product discontinuity, LANSCE is investigating the replacement of klystrons. One of the highly promising amplifiers are the GaN Solid-State Power Amplifiers (SSPAs). Currently available GaN SSPA can produce 5kW pulse RF power. Hence, a multitude of Solid-State Power Amplifiers (SSPA) combined together to produce the equivalent or better performance than the1.25 MW klystron. One problem of the GaN SSPA is the high drain power dissipation. To counteract the high power dissipation, a SSPA is recommended to be operated at high efficiency, which is obtained by running the SSPA as close as possible to the saturation. The outphasing technique provides this requirement of the SSPA operation. The outphasing amplifier converts the Amplitude Modulation-Phase Modulation(AM-PM) signal to two constant envelope PM signals, so that each amplifier of two branches linearly amplifies constant envelope PM input signals. The combiner combines two amplified PM signals, yielding the signal of linear amplification of the input signal. The core part of the outphasing amplifier is the signal component separator(SCS) in which the AM-PM input signal is converted to two constant envelope PM signals.
To verify the outphasing technique, a low power testbench is built and a digital SCS(DSCS) is implemented on a FPGA. The functionality of the DSCS and the performance of the low power outphasing amplifier are tested and the results are reported.
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