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Ion beam irradiation is a powerful technique for defect engineering, offering precise control over ion fluence and energy. In this study, tellurium thin films deposited by thermal vapor evaporation were irradiated with 80 MeV Ag⁷⁺ ions at fluences ranging from 1×10¹¹ to 3×10¹² ions/cm². XRD shows a reduction in crystallite size and increasing tensile strain with fluence, supported by Williamson–Hall analysis.Raman spectra exhibit redshifts and broadening of the A1 and E2g modes, confirming defect formation and lattice disorder. AFM reveals fluence-dependent changes in grain morphology and surface roughness, while RBS verifies Te stoichiometry with only minor sputtering. UV–visible spectroscopy indicates enhanced optical absorption after irradiation. Hall measurements confirm n-type behavior with carrier concentration increasing from 2.12×10¹⁶ to 1.74×10¹⁷ cm⁻³. Temperature-dependent resistivity shows a reduced activation energy, and I–V curves under dark and 10 mW illumination reveal substantial photocurrent enhancement. Overall, SHI irradiation effectively tailors defect states, transport properties, and photo response in tellurium thin films for next-generation optoelectronic applications.
Footnotes
- SHI irradiation is performed at IUAC, New Delhi.
- All the characterizations are performed in CRF and NRF Facility of IIT Delhi.
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