Speaker
Description
Photocathodes at Negative Electron Affinity (NEA), like GaAs and GaN, allow for efficient production of spin-polarized electrons. When activated to NEA with cesium and an oxidant, they are characterized by an extreme sensitivity to chemical poisoning, resulting in a short operational lifetime. In this work, we demonstrate that deposition of a cesium iodide (CsI) layer can be used to enhance the dark lifetime of both GaN and GaAs photocathodes activated with cesium. The mechanism behind this improvement is investigated using X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM) techniques.
Funding Agency
This work is supported by the U.S. National Science Foundation under Award No. PHY-1549132, the Center for Bright Beams, NSF-1734189 and U.S. Department of Energy grants DE-SC0021002 and DE-SC0021425.
| Region represented | North America |
|---|---|
| Paper preparation format | LaTeX |
