19–24 May 2024
Music City Center
US/Central timezone

Impact of insertion devices on SSRF‑U lattice

THPC35
23 May 2024, 16:00
2h
Country (MCC Exhibit Hall A)

Country

MCC Exhibit Hall A

Poster Presentation MC5.D01 Beam Optics Lattices, Correction Schemes, Transport Thursday Poster Session

Speaker

Liyuan Tan (Shanghai Institute of Applied Physics)

Description

The Shanghai Synchrotron Radiation Facility upgrade (SSRF-U) lattice is a 4th generation, 3 GeV, upgrade plan for SSRF. It aims to reach the diffraction limit while keeping the existing beam lines and spaces. The majority of insertion devices (IDs) in operation of current SSRF will be considered as the ID scheme in SSRF-U. The kick-map method has been used to build ID models, including the EPUs and SCW. Optical distortion caused by IDs was compensated using both local and global corrections. Then, frequency map analysis (FMA) method was used to identify potentially dangerous resonance lines. After considering high-order magnetic field errors, the dynamic aperture, energy acceptance, and Touschek lifetime were examined.

Region represented Asia
Paper preparation format Word

Primary author

Liyuan Tan (Shanghai Institute of Applied Physics)

Co-authors

Shun-Qiang Tian (Shanghai Synchrotron Radiation Facility) Wenzhi Zhang (Shanghai Institute of Applied Physics) Xinzhong Liu (Shanghai Advanced Research Institute) Xu Wu (Shanghai Advanced Research Institute)

Presentation materials

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