7–12 May 2023
Venice, Italy
Europe/Zurich timezone

Development of a Prototype Pulsed Power Supply using SiC-MOSFETs for a Fast Kicker System in KEK-PF

THPA168
11 May 2023, 16:30
2h
Salone Adriatico

Salone Adriatico

Poster Presentation MC7.T16: Pulsed Power Technology Thursday Poster Session

Speaker

Satoshi Shinohara (High Energy Accelerator Research Organization)

Description

We are developing a fast pulsed power supply using Silicon Carbide (SiC) MOSFETs for a camshaft bunch kicker in KEK-PF. In the kicker system, the pulsed power supply needs to generate a high-precision short pulse with high power. A high repetition rate is also required due to the short circumference of the KEK-PF storage ring of 187 m. Therefore, the target specifications are 500 A pulsed current within a 1% uncertainty, a 100 ns pulse width, a timing jitter of less than 300 ps, a 15 kV voltage resistance, and a 1 MHz repetition rate. In addition, the power supply should have a high radiation resistivity because the power supply will be placed near the accelerator ring to reduce transmission impedance. To achieve the requirements, we have newly started the development of a pulsed power supply with a solid-state switching module using SiC-MOSFETs. We first developed a prototype power supply with a 14 kV switching module consisting of 16 SiC-MOSFETs in series. We confirmed the prototype power supply could deliver half-sine pulses with stable operation at a low repetition rate. The prototype power supply was also tested near the accelerator ring and worked successfully for about two months. We report the performance of the prototype pulsed power supply using SiC-MOSFETs.

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Primary author

Satoshi Shinohara (High Energy Accelerator Research Organization)

Co-authors

Chikaori Mitsuda (High Energy Accelerator Research Organization) Daichi Naito (High Energy Accelerator Research Organization) Takafumi Okuda (NexFi Technology Inc.) Takashi Nakamura (NexFi Technology Inc.)

Presentation materials

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