Speaker
Chong Shik Park
(Korea University Sejong Campus)
Description
Due to the limitations of Laser Produced Plasma (LPP) Extreme Ultraviolet(EUV) sources, semiconductor industry is seeking the next generation EUV source for sub-nm scale lithography processes. Various accelerator-based light sources have been already proposed as EUV lithography light sources. We investigated the design of a compact high-power EUV light source using laser Compton scattering. The configuration of the linear accelerator and laser system was optimized based on the specifications required for the sub-nm lithography process. Electron beam dynamics and laser electron scattering simulations have also been demonstrated to achieve the required EUV power.
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Primary author
Chong Shik Park
(Korea University Sejong Campus)
