Speaker
Description
The shift of light source wavelength from 193 nm (Deep UV) to 13.5 nm (Extreme UV) in modern lithography tools has enabled mass production of semiconductor chips with feature sizes as small as 4 nm. To obtain smaller feature sizes, beyond EUV lithography (also known as Blue-X or EUVL Extension) at 6.x nm has been proposed.* Free-electron lasers (FEL), with output wavelength that is broadly tunable, can generate high-power 6.x-nm light. This paper compares different FEL approaches that have been experimentally demonstrated, albeit at other wavelengths, such as self-amplified spontaneous emission, regenerative amplifier FEL, harmonic lasing, etc. For this comparison, important factors under consideration are the electron beam energy and beam quality requirements, FEL efficiency, pulse energy fluctuations, spectral output, as well as suitability of the FEL output beam for use in Blue-X lithography.
Footnotes
- Nassir Mojarad, Jens Gobrecht & Yasin Ekinci “Beyond EUV lithography: a comparative study of efficient photoresists' per-formance” Scientific Reports volume 5, Article number: 9235 (2015).
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