Speaker
Description
Ion implantation is an accelerator technology essential for creating defects or introducing impurities into materials. A research and development study is currently underway at QST Takasaki Institute toward ultrahigh-precision single-ion implantation based on laser-cooling techniques. To achieve this, we incorporate a linear Paul trap as an ultracold single-ion source, where trapped ions can be cooled to the order of mK or even “Coulomb-crystallized” by Doppler laser cooling. In our scheme, N or Si ions, useful for ion implantation to create color centers, are sympathetically cooled down to the mK range through Coulomb collisions by co-trapping them with laser-cooled Ca ions. Then, the ions are extracted selectively from the trap to be accelerated and focused through a 50-kV electrostatic bipotential lens system. We aim to focus the ions on the order of 10 nm for ultrahigh-precision implantation. The implantation system has already been assembled, and the commissioning is currently underway to enable ion extraction using a Coulomb crystal and focusing extracted cold ions. We present the status of system development and outline the scheme for selective ion extraction and nanobeam focusing based on multiparticle simulations.
Funding Agency
Work supported in part by JST Moonshot R&D Grant Number JPMJMS2062 and JSPS KAKENHI Grant Numbers JP25K15770.
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