Speakers
Description
In scanning transmission X-ray microscopy (STXM) beamlines, precise control of X-ray beam position and intensity (I₀) is crucial to minimize imaging artefacts and improve spectral quality. However, limited working distances in STXM setups restrict the integration of conventional diagnostics. To address this, we have developed a center-stop-based Silicon Carbide (SiC) device that integrates beam position sensitivity directly into the optical path, by functionalizing the order sorting aperture (OSA). The device was fabricated from a 20 µm thick single-crystalline SiC membrane using plasma focused ion beam (PFIB) lithography, enabling accurate microstructuring while preserving front-side electrode integrity. Live recording of beam position and I₀ during measurements is enabled through the 4-sector diode geometry patterned around the center stop. Validation experiments at the PolLux beamline (Swiss Light Source) demonstrate the device’s suitability for real-time correction of beam-induced artefacts in next-generation STXM. Additional fabrication details and characterization will be presented at the conference
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