1–6 Jun 2025
Taipei International Convention Center (TICC)
Asia/Taipei timezone

Development of a 13 kV SiC-MOSFET-Based pulsed power supply for evaluating metallic materials under high electric fields

WEPB064
4 Jun 2025, 16:00
2h
Exhibiton Hall A _Bear (TWTC)

Exhibiton Hall A _Bear

TWTC

Poster Presentation MC7.T16 Pulsed Power Technology Wednesday Poster Session

Speaker

Hiroaki Kamezaki (Pulsed Power Japan Laboratory Ltd.)

Description

To perform high electric field experiments for evaluating the vacuum breakdown characteristics of accelerator materials, we have developed a high-voltage pulsed power supply capable of providing a 10 kV peak voltage, 1 µs pulse width, and 1 kHz repetition rate. This system is designed to reliably apply intense fields to metallic electrodes with load capacitances up to 650 pF. To ensure operational reliability and prevent potential equipment damage, it incorporates an interlock system that halts operation when load short-circuits or external interlock signals are detected. By employing a 13 kV SiC-MOSFET developed under the Tsukuba Power Electronics Constellation (TPEC), we reduced the number of components and improved overall reliability. This report presents the technical features and performance of the power supply, demonstrating that it meets the operational specifications necessary for evaluating candidate materials under high electric field conditions.

Region represented Asia
Paper preparation format LaTeX

Author

Hiroaki Kamezaki (Pulsed Power Japan Laboratory Ltd.)

Co-authors

Akira Tokuchi (Pulsed Power Japan Laboratory Ltd.) Mitsuo Akemoto (High Energy Accelerator Research Organization) Tetsuo Abe (High Energy Accelerator Research Organization)

Presentation materials

There are no materials yet.