1–6 Jun 2025
Taipei International Convention Center (TICC)
Asia/Taipei timezone

Low-temperature plasma ion source modeling with accurate plasma chemistry

WEPS128
4 Jun 2025, 16:00
2h
Exhibiton Hall A _Salmon (TWTC)

Exhibiton Hall A _Salmon

TWTC

Poster Presentation MC5.D11 Code Developments and Simulation Techniques Wednesday Poster Session

Speaker

M.C. Lin (Hanyang University)

Description

Simulations of LTP ion sources using Particle-In-Cell (PIC) models provides cost-effective methods for improving source performance and optimizing beam properties. One key element of these models is to accurately model plasma chemistry inside of the plasma chamber. Also, processes outside of the plasma chamber, such as secondary electron production induced from ion collisions with extraction electrodes and charge neutralization via recombination due to residual neutral gas outside can have a large effect on the resultant ion beam.
We present detailed simulations LTP ion sources using the plasma simulation software VSim. VSim has unique capabilities including self-consistent plasma formation and evolution inside the chamber, accurate surface interaction models, externally applied magnetic field configuration models, and importantly accurate plasma chemistry models. Our results compare simulated beam properties for a helium source and quantify beam neutralization effects of residual gasses. This work shows both the importance of accurately modeling plasma chemistry and collisions for LTP sources in both the plasma chamber and beam extraction region.

Region represented America
Paper preparation format LaTeX

Author

Seth Veitzer (Tech-X Corporation (United States))

Co-authors

Morgan Dehnel (Dehnel - Particle Accelerator Components & Engineering, Inc.) Daniel Main (Tech-X Corporation (United States)) Eve Lanham (Tech-X Corporation (United States)) Scott Kruger (Tech-X Corporation (United States)) M.C. Lin (Hanyang University)

Presentation materials

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