1–6 Jun 2025
Taipei International Convention Center (TICC)
Asia/Taipei timezone

An overview of research on nanostructured negative electron affinity GaAs photocathode at Jefferson Lab

TUPS131
3 Jun 2025, 16:00
2h
Exhibiton Hall A _Salmon (TWTC)

Exhibiton Hall A _Salmon

TWTC

Poster Presentation MC3.T02 Electron Sources Tuesday Poster Session

Speaker

Shukui Zhang (Thomas Jefferson National Accelerator Facility)

Description

Inspired by the progress of surface plasmon research and the rapid development of nanotechnology, we embarked on an endeavor aiming to improve the GaAs-based photocathode performance by patterning semiconductor wafer surfaces with pillar arrays on the scale of hundreds of nanometers. Over the past a few years, extensive research effort involving both simulation and experimental studies have been made, leading to the demonstration of some important underlying physical mechanisms such as Mie-resonance at different laser wavelengths and strong quantum efficiency enhancement over their peers with conventional flat surfaces. In this report, we present an overview of our research activities including previous work, current status, and the near future plan about an on-going effort to test newly designed nanostructured photocathodes in a high voltage electron gun.

Funding Agency

This work is supported by U.S. DOE Contract No. DE-AC05-06OR23177.

Region represented America
Paper preparation format LaTeX

Authors

Md Abdullah Mamun (Thomas Jefferson National Accelerator Facility) Md Aziz Ar Rahman (Thomas Jefferson National Accelerator Facility) Shukui Zhang (Thomas Jefferson National Accelerator Facility)

Presentation materials

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