Speaker
Matthew Andorf
(Cornell University (CLASSE))
Description
It has recently been demonstrated that, as is the case with GaAs, photoemitted electrons from Negative Electron Affinity (NEA) GaN can be spin-polarized. Leveraging the many decades of research performed on NEA GaAs to increase spin-polarization, quantum efficiency and robustness in this proceeding we apply analogous approaches to GaN. In particular we present the development of strained GaN to increase the degree of obtainable spin polarization and present first ever measurements of Sb-based NEA recipes on GaN for robustness against vacuum poisoning.
Funding Agency
DE-SC0025356
| Region represented | America |
|---|---|
| Paper preparation format | LaTeX |
Author
Matthew Andorf
(Cornell University (CLASSE))
Co-authors
Samuel Levenson
(Cornell University (CLASSE))
Luca Cultrera
(Brookhaven National Laboratory)
Jared Maxson
(Cornell University)
Ivan Bazarov
(Cornell University (CLASSE))
