1–6 Jun 2025
Taipei International Convention Center (TICC)
Asia/Taipei timezone

Performance of Cs-Sb-O activated GaAs at high average current in HERACLES

TUPM041
3 Jun 2025, 16:00
2h
Exhibiton Hall A _Magpie (TWTC)

Exhibiton Hall A _Magpie

TWTC

Poster Presentation MC2.T02 Electron Sources Tuesday Poster Session

Speaker

Matthew Andorf (Cornell University (CLASSE))

Description

Negative Electron Affinity (NEA) GaAs is presently the most viable option for the production of a spin-polarized electron beam at high average current (> 1 mA). To bring GaAs to an NEA state, typically a mono-layer of Cs and Oxygen are deposited onto the cathodes surface. While this results in a high Quantum Efficiency (QE), the activation layer is extremely fragile resulting in a short operational lifetime. Alternative activation recipes that include the use of Sb have demonstrated improved robustness from vacuum poisoning. In this proceeding we present charge lifetime measurements of Cs-Sb-O while operated inside a 200 keV DC gun at an average current of 1 mA.

Funding Agency

DOE DE-SC0023517

Region represented America
Paper preparation format LaTeX

Author

Matthew Andorf (Cornell University (CLASSE))

Co-authors

Ivan Bazarov (Cornell University (CLASSE)) Jared Maxson (Cornell University) Adam Bartnik (Cornell University (CLASSE)) Benjamin Dickensheets (Cornell University) Samuel Levenson (Cornell University (CLASSE))

Presentation materials

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