Speaker
Mr
Lei Guo
(Hiroshima University)
Description
The insertion devices (IDs) can affect the electron beam quality of storage ring light source. We investigate how the IDs in Hefei Light Source (HLS) affect the linear and nonlinear beam dynamics. We use the kick map approach to simulate the IDs fields. To correct the linear optics perturbation due to the IDs, we use the adjacent quadrupoles to compensate the beta functions beating. We calculate the dynamic aperture and beam lifetime after linear optics compensation. The details of the IDs effect investigation are presented in this paper.
| Region represented | Asia |
|---|---|
| Paper preparation format | LaTeX |
Author
Tao He
(University of Science and Technology of China)
Co-authors
Kemin Chen
(University of Science and Technology of China)
Mr
Lei Guo
(Hiroshima University)
Wei Xu
(University of Science and Technology of China)
Zhe Wang
(University of Science and Technology of China)
Zhonghan Wang
(University of Science and Technology of China)
