27 September 2026 to 1 October 2026
Hilton San Francisco - Financial District
America/Los_Angeles timezone

Research on the Production of mA-level High-Intensity Pulsed Ion Beams

30 Sept 2026, 11:10
30m
50 Auditorium (LBNL)

50 Auditorium

LBNL

1 Cyclotron Road Berkeley, CA
Contributed Oral Presentation WEB: Oral session

Speaker

Lixuan Li (Institute of Modern Physics, Chinese Academy of Sciences)

Description

The production of mA-level high-intensity, highly charged pulsed ion beams is a key technology for the development of advanced heavy-ion synchrotrons. By utilizing the afterglow mode of an ECR ion source (ECRIS), pulsed ion beams can be produced with peak intensities several times higher than those in the conventional continuous-wave (CW) mode, and the application of a pulsed biased disk voltage in the afterglow mode can further enhance the pulsed beam intensity. In this paper, an experimental study combining a pulsed biased disk with the afterglow mode was conducted on the SECRAL-IV ion source. A Bi³¹⁺ ion beam with a peak intensity of 1 mA was obtained and successfully delivered to the downstream accelerator, enabling the accumulated ion beam in the HIAF-BRing to reach 3.166 × 10¹⁰ particles per pulse (ppp).

Funding Agency

NSFC 12505188

Classification MC1: New developments and status reports
I have read and accept the Privacy Policy Statement Yes

Author

Lixuan Li (Institute of Modern Physics, Chinese Academy of Sciences)

Co-authors

Jibo Li (Institute of Modern Physics, Chinese Academy of Sciences) Liangting Sun (Institute of Modern Physics, Chinese Academy of Sciences) Xinyu Wang (Institute of Modern Physics, Chinese Academy of Sciences) Yucheng Feng (Institute of Modern Physics, Chinese Academy of Sciences)

Presentation materials

There are no materials yet.